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| MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING Unit : millimeters DESCRIPTION The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. @ FEATURES Low voltage Vcc=3.5V High power Po=26.5dBm @19201980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm E D C 4.00 1.40 1.2 @ Pin C Pout A Vc1 D Vcb B Vc2 E Vref 4.00 A B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3). ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp. ZG=ZL=50 Condition Ratings* 6 7 -20 +85 -30 +95 Unit V dBm C C *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol f Icqt Ict PAE Pin in ACLR 2Sp/3Sp RX noise **NOTE Parameter Frequency Idle current Total current Power added efficiency Input Power Return loss Adjacent channel leakage power at 5MHz Adjacent channel leakage power at 10MHz 2nd/3rd harmonics RX band noise Test conditions** MIN 1920 No RF input Limits TYP 35 252 50 -1.0 -6 -41 -54 -38 -48 -30 -140 MAX 1980 Unit MHz mA mA % dBm dB dBc dBc dBc dBm/Hz Po=26.5dBm Vc1=Vc2=3.5V Vref=2.9V Vcb=2.9V : ZG=ZL=50 3.84Mcps spreading, HPSK. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. Feb.,04 |
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